010-82597789

        13691313262

        ?專注粉末,粉體,顆粒

                  ?----測量與分析儀器解決方案。
        ?
        研發--產銷--售后--實驗室服務--后延服務--租賃服務
        中儀萬成
        ZHONGYIWANCHENG
        您的當前位置:
        術語表
        來源: | 作者:pmo5b1934 | 發布時間: 2019-07-05 | 2190 次瀏覽 | 分享到:
        術語表



        • Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
        • 受主 - 一種用來在半導體中形成空穴的元素,比如硼、銦和鎵。受主原子必須比半導體元素少一價電子
        • Alignment Precision - Displacement of patterns that occurs during the photolithography process.
        • 套準精度 - 在光刻工藝中轉移圖形的精度。
        • Anisotropic - A process of etching that has very little or no undercutting
        • 各向異性 - 在蝕刻過程中,只做少量或不做側向凹刻。
        • Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
        • 沾污區域 - 任何在晶圓片表面的外來粒子或物質。由沾污、手印和水滴產生的污染。
        • Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
        • 橢圓方位角 - 測量入射面和主晶軸之間的角度。
        • Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
        • 背面 - 晶圓片的底部表面。(注:不推薦該術語,建議使用“背部表面”)
        • Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
        • 底部硅層 - 在絕緣層下部的晶圓片,是頂部硅層的基礎。
        • Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
        • 雙極晶體管 - 能夠采用空穴和電子傳導電荷的晶體管。
        • Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
        • 綁定晶圓片 - 兩個晶圓片通過二氧化硅層結合到一起,作為絕緣層。
        • Bonding Interface - The area where the bonding of two wafers occurs.
        • 綁定面 - 兩個晶圓片結合的接觸區。
        • Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
        • 埋層 - 為了電路電流流動而形成的低電阻路徑,攙雜劑是銻和砷。
        • Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
        • 氧化埋層(BOX) - 在兩個晶圓片間的絕緣層。
        • Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
        • 載流子 - 晶圓片中用來傳導電流的空穴或電子。
        • Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
        • 化學-機械拋光(CMP) - 平整和拋光晶圓片的工藝,采用化學移除和機械拋光兩種方式。此工藝在前道工藝中使用。
        • Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
        • 卡盤痕跡 - 在晶圓片任意表面發現的由機械手、卡盤或托盤造成的痕跡。
        • Cleavage Plane - A fracture plane that is preferred.
        • 解理面 - 破裂面
        • Crack - A mark found on a wafer that is greater than 0.25 mm in length.
        • 裂紋 - 長度大于0.25毫米的晶圓片表面微痕。
        • Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
        • 微坑 - 在擴散照明下可見的,晶圓片表面可區分的缺陷。
        • Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
        • 傳導性(電學方面) - 一種關于載流子通過物質難易度的測量指標 。
        • Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
        • 導電類型 - 晶圓片中載流子的類型,N型和P型。
        • Contaminant, Particulate (see light point defect)
        • 污染微粒 (參見光點缺陷)
        • Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
        • 沾污區域 - 部分晶圓片區域被顆粒沾污,造成不利特性影響。
        • Contamination Particulate - Particles found on the surface of a silicon wafer.
        • 沾污顆粒 - 晶圓片表面上的顆粒。
        • Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
        • 晶體缺陷 - 部分晶體包含的、會影響電路性能的空隙和層錯。
        • Crystal Indices (see Miller indices)
        • 晶體指數 (參見米勒指數)
        • Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
        • 耗盡層 - 晶圓片上的電場區域,此區域排除載流子。
        • Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
        • 表面起伏 - 在合適的光線下通過肉眼可以發現的晶圓片表面凹陷。
        • Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
        • 施主 - 可提供“自由”電子的攙雜物,使晶圓片呈現為N型。
        • Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
        • 攙雜劑 - 可以為傳導過程提供電子或空穴的元素,此元素可以改變傳導特性。晶圓片攙雜 劑可以在元素周期表的III 和 V族元素中發現。
        • Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
        • 摻雜 - 把攙雜劑摻入半導體,通常通過擴散或離子注入工藝實現。
        • Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
        • 芯片邊緣和縮進 - 晶片中不完整的邊緣部分超過0.25毫米。
        • Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
        • 邊緣排除區域 - 位于質量保證區和晶圓片外圍之間的區域。(根據晶圓片的尺寸不同而有所不同。)
        • Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
        • 名義上邊緣排除(EE) - 質量保證區和晶圓片外圍之間的距離。
        • Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
        • 邊緣輪廓 - 通過化學或機械方法連接起來的兩個晶圓片邊緣。
        • Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
        • 蝕刻 - 通過化學反應或物理方法去除晶圓片的多余物質。
        • Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
        • 質量保證區(FQA) - 晶圓片表面中央的大部分。
        • Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
        • 平邊 - 晶圓片圓周上的一個小平面,作為晶向定位的依據。
        • Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
        • 平口直徑 - 由小平面的中心通過晶圓片中心到對面邊緣的直線距離。
        • Four-Point Probe - Test equipment used to test resistivity of wafers.
        • 四探針 - 測量半導體晶片表面電阻的設備。
        • Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
        • 爐管和熱處理 - 溫度測量的工藝設備,具有恒定的處理溫度。
        • Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
        • 正面 - 晶圓片的頂部表面(此術語不推薦,建議使用“前部表面”)。
        • Goniometer - An instrument used in measuring angles.
        • 角度計 - 用來測量角度的設備。
        • Gradient, Resistivity (not preferred; see resistivity variation)
        • 電阻梯度 (不推薦使用,參見“電阻變化”)
        • Groove - A scratch that was not completely polished out.
        • 凹槽 - 沒有被完全清除的擦傷。
        • Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
        • 手工印記 - 為區分不同的晶圓片而手工在背面做出的標記。
        • Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
        • 霧度 - 晶圓片表面大量的缺陷,常常表現為晶圓片表面呈霧狀。
        • Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
        • 空穴 - 和正電荷類似,是由缺少價電子引起的。
        • Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
        • 晶錠 - 由多晶或單晶形成的圓柱體,晶圓片由此切割而成。
        • Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
        • 激光散射 - 由晶圓片表面缺陷引起的脈沖信號。
        • Lay - The main direction of surface texture on a wafer.
        •  - 晶圓片表面結構的主要方向。
        • Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
        • 光點缺陷(LPD) (不推薦使用,參見“局部光散射”)
        • Lithography - The process used to transfer patterns onto wafers.
        • 光刻 - 從掩膜到圓片轉移的過程。
        • Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
        • 局部光散射 - 晶圓片表面特征,例如小坑或擦傷導致光線散射,也稱為光點缺陷。
        • Lot - Wafers of similar sizes and characteristics placed together in a shipment.
        • 批次 - 具有相似尺寸和特性的晶圓片一并放置在一個載片器內。
        • Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
        • 多數載流子 - 一種載流子,在半導體材料中起支配作用的空穴或電子,例如在N型中是電子。
        • Mechanical Test Wafer - A silicon wafer used for testing purposes.
        • 機械測試晶圓片 - 用于測試的晶圓片。
        • Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
        • 微粗糙 - 小于100微米的表面粗糙部分。
        • Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
        • Miller索指數 - 三個整數,用于確定某個并行面。這些整數是來自相同系統的基本向量。
        • Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
        • 最小條件或方向 - 確定晶圓片是否合格的允許條件。
        • Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
        • 少數載流子 - 在半導體材料中不起支配作用的移動電荷,在P型中是電子,在N型中是空穴。
        • Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
        • 堆垛 - 晶圓片表面超過0.25毫米的缺陷。
        • Notch - An indent on the edge of a wafer used for orientation purposes.
        • 凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。
        • Orange Peel - A roughened surface that is visible to the unaided eye.
        • 桔皮 - 可以用肉眼看到的粗糙表面
        • Orthogonal Misorientation -
        • 直角定向誤差 -
        • Particle - A small piece of material found on a wafer that is not connected with it.
        • 顆粒 - 晶圓片上的細小物質。
        • Particle Counting - Wafers that are used to test tools for particle contamination.
        • 顆粒計算 - 用來測試晶圓片顆粒污染的測試工具。
        • Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
        • 顆粒污染 - 晶圓片表面的顆粒。
        • Pit - A non-removable imperfection found on the surface of a wafer.
        • 深坑 - 一種晶圓片表面無法消除的缺陷。
        • Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
        • 點缺陷 - 不純凈的晶缺陷,例如格子空缺或原子空隙。
        • Preferential Etch -
        • 優先蝕刻 -
        • Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
        • 測試晶圓片 - 影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶圓片。對于具體應用該晶圓片有嚴格的要求,但是要比主晶圓片要求寬松些。
        • Primary Orientation Flat - The longest flat found on the wafer.
        • 主定位邊 - 晶圓片上最長的定位邊。
        • Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
        • 加工測試晶圓片 - 用于區域清潔過程中的晶圓片。
        • Profilometer - A tool that is used for measuring surface topography.
        • 表面形貌劑 - 一種用來測量晶圓片表面形貌的工具。
        • Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
        • 電阻率(電學方面) - 材料反抗或對抗電荷在其中通過的一種物理特性。
        • Required - The minimum specifications needed by the customer when ordering wafers.
        • 必需 - 訂購晶圓片時客戶必須達到的最小規格。
        • Roughness - The texture found on the surface of the wafer that is spaced very closely together.
        • 粗糙度 - 晶圓片表面間隙很小的紋理。
        • Saw Marks - Surface irregularities
        • 鋸痕 - 表面不規則。
        • Scan Direction - In the flatness calculation, the direction of the subsites.
        • 掃描方向 - 平整度測量中,局部平面的方向。
        • Scanner Site Flatness -
        • 局部平整度掃描儀 -
        • Scratch - A mark that is found on the wafer surface.
        • 擦傷 - 晶圓片表面的痕跡。
        • Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
        • 第二定位邊 - 比主定位邊小的定位邊,它的位置決定了晶圓片的類型和晶向。
        • Shape -
        • 形狀 -
        • Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
        • 局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區域。
        • Site Array - a neighboring set of sites
        • 局部表面系列 - 一系列的相關局部表面。
        • Site Flatness -
        • 局部平整 -
        • Slip - A defect pattern of small ridges found on the surface of the wafer.
        • 劃傷 - 晶圓片表面上的小皺造成的缺陷。
        • Smudge - A defect or contamination found on the wafer caused by fingerprints.
        • 污跡 - 晶圓片上指紋造成的缺陷或污染。
        • Sori -
        • Striation - Defects or contaminations found in the shape of a helix.
        • 條痕 - 螺紋上的缺陷或污染。
        • Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
        • 局部子表面 - 局部表面內的區域,也是矩形的。子站中心必須位于原始站點內部。
        • Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
        • 表面紋理 - 晶圓片實際面與參考面的差異情況。
        • Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
        • 測試晶圓片 - 用于生產中監測和測試的晶圓片。
        • Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
        • 頂部硅膜厚度 - 頂部硅層表面和氧化層表面間的距離。
        • Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
        • 頂部硅膜 - 生產半導體電路的硅層,位于絕緣層頂部。
        • Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
        • 總計指示劑數(TIR) - 晶圓片表面位面間的最短距離。
        • Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
        • 原始測試晶圓片 - 還沒有用于生產或其他流程中的晶圓片。
        • Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
        • 無效 - 在應該綁定的地方沒有綁定(特別是化學綁定)。
        • Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
        • 波浪 - 晶圓片表面通過肉眼能發現的彎曲和曲線。
        • Waviness - Widely spaced imperfections on the surface of a wafer.
        • 波紋 - 晶圓片表面經常出現的缺陷。

        新聞資訊
        news information
           

        咨詢熱線:

        13691313262

        郵箱:bjzywc@163.com

        電話:010-82597789

        地址:北京市海淀區信息路甲28號C座(二層)02A-418號

        《BT天堂WWW中文在线种子》 第1集在线观看